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Posted: April 20th, 2022
1. A single solar cell of area 1 cm2 has a photocurrent of 15 mA and a diode saturation current of 3.66 x 10-11 A at 300 K. Calculate the open circuit voltage and the short circuit current of the solar cell.
2. Consider a silicon p-i-n photodiode with an intrinsic region of width 10 μm. Light from a GaAs laser at energy ħω = 1.43 eV impinges on the diode. The optical power is 1 W/cm2 . Calculate the photocurrent density in the detector.
3. At a wavelength of λ = 0.70 μm, the index of refraction for GaAs is n2 = 3.8 and that for GaP is n2 = 3.2. Consider a GaAs 1-x Px material with a mole fraction x = 0.40. Assuming the index of refraction is a linear function of the mole fraction, determine the reflection coefficient, R at the GaAs0.6P0.4 – air interface.
4. Consider a GaAs Fabry-Perot laser cavity. The absorption loss in the cavity is given by an absorption coefficient of 20 cm-1. Calculate the cavity length at which the absorption loss and the mirror loss becomes equal.
5. Consider the following materials, GaAs, AlAs, GaP, AlAs and InAs, Which material and combination of materials and alloys may be used for make photodetectors optimized in the following two wavelengths; 0,5 to 0.8 μm, and 1.4 μm?
6. What material should be used for efficient detector or solar cell at 8 μm?
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1. At 300 K, a single 1 cm2 solar cell has a photocurrent of 15 mA and a diode saturation current of 3.66 x 10-11 A. Determine the solar cell’s open circuit voltage and short circuit current.
2. Consider a silicon p-i-n photodiode with a 10 m intrinsic region. Light impinges on the diode from a GaAs laser with energy = 1.43 eV. The optical power is one watt per square centimeter. Calculate the detector’s photocurrent density.
3. At a wavelength of = 0.70 m, GaAs has an index of refraction of n2 = 3.8 and GaP has an index of refraction of n2 = 3.2. Consider the material GaAs 1-x Px with a mole fraction x = 0.40. Assume the index of refraction is a linear function.
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